Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices

N. Dietz 3 , C. J. Summers , and I. T. Ferguson 1, 2 1 Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332-0250, USA 2 Georgia Institute of Technology, School of Materials Science and Engineering, Atlanta, GA 30332-0245, USA 3 Georgia State University, Department of Physics and Astronomy, Atlanta, GA 30303, USA 4 Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany 5 Georgia Institute of Technology, School of Mechanical Engineering, Atlanta, GA 30332-0405, USA